Compositional and temperature dependence of the energy band gap of CuxInySe2 epitaxial layers
Identifieur interne : 001207 ( Chine/Analysis ); précédent : 001206; suivant : 001208Compositional and temperature dependence of the energy band gap of CuxInySe2 epitaxial layers
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Abstract
The compositional and temperature dependence of the energy band gap of CuxInySe2 epitaxial layers grown by metal-organic chemical vapour deposition on GaAs( 1 0 0) substrates was studied by photoreflectance (PR) spectroscopy. Investigation of the compositional dependence at 20 K showed a slight increase in the energy gap with the increase in the [Cu]/[In] fraction. Line-shape analysis of PR spectra indicated that near stoichiometric and slightly Cu-rich CuInSe2 layers have a better crystallinity than In-rich ones. Investigation of the temperature dependence for both Cu-rich and In-rich modifications, in the range 300-20 K, demonstrated a red-shift of band-gap energies with the decrease in temperature below 70 K and provided experimental evidence of the anomalous temperature dependence of the energy gap in this material. Moreover, a combination of modulation power-dependent PR and photoluminescence studies at 20 K revealed that the optical emission interfering in the PR spectra at energies below the band-gap energy originates from donor-acceptor pair recombination and diminishes at low modulation powers.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Compositional and temperature dependence of the energy band gap of Cu<sub>x</sub>In<sub>y</sub>Se<sub>2</sub> epitaxial layers</title><author><name sortKey="Xu, H Y" uniqKey="Xu H">H. Y. Xu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Instrumentation Science and Dynamic Measurement (North University of China), Ministry of Education</s1><s2>030051 Taiyuan</s2><s3>CHN</s3><sZ>1 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>030051 Taiyuan</wicri:noRegion></affiliation></author><author><name sortKey="Papadimitriou, D" uniqKey="Papadimitriou D">D. Papadimitriou</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, School of Applied Mathematics and Physics, National Technical University of Athens, 9 Heroon Polytechniou Str., Zografou Campus</s1><s2>157 80 Athens</s2><s3>GRC</s3><sZ>2 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>157 80 Athens</wicri:noRegion></affiliation></author><author><name sortKey="Zoumpoulakis, L" uniqKey="Zoumpoulakis L">L. Zoumpoulakis</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department III, Laboratory of 'Materials Science and Technology'/Inter-disciplinary Postgraduate Program of NTUA, School of Chemical Engineering, National Technical University of Athens, 9 Heroon Polytechniou Str., Zografou Campus</s1><s2>157 73 Athens</s2><s3>GRC</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>157 73 Athens</wicri:noRegion></affiliation></author><author><name sortKey="Simitzis, J" uniqKey="Simitzis J">J. Simitzis</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department III, Laboratory of 'Materials Science and Technology'/Inter-disciplinary Postgraduate Program of NTUA, School of Chemical Engineering, National Technical University of Athens, 9 Heroon Polytechniou Str., Zografou Campus</s1><s2>157 73 Athens</s2><s3>GRC</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>157 73 Athens</wicri:noRegion></affiliation></author><author><name sortKey="Lux Steiner, M Ch" uniqKey="Lux Steiner M">M.-Ch. Lux-Steiner</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Department SE2: Heterogeneous Material Systems, Hahn-Meitner Institut, Glienickerstr. 100</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">08-0443955</idno><date when="2008">2008</date><idno type="stanalyst">PASCAL 08-0443955 INIST</idno><idno type="RBID">Pascal:08-0443955</idno><idno type="wicri:Area/Main/Corpus">006336</idno><idno type="wicri:Area/Main/Repository">006A90</idno><idno type="wicri:Area/Chine/Extraction">001207</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-3727</idno><title level="j" type="abbreviated">J. phys., D. Appl. phys. : (Print)</title><title level="j" type="main">Journal of physics. D, Applied physics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Acceptor donor pair</term><term>Chalcopyrite</term><term>Copper selenides</term><term>Crystallinity</term><term>Energy gap</term><term>Epitaxial layers</term><term>Indium selenides</term><term>Line shape</term><term>MOCVD</term><term>Photoluminescence</term><term>Photoreflectance</term><term>Spectral line shift</term><term>Temperature effects</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet température</term><term>Bande interdite</term><term>Méthode MOCVD</term><term>Photoréflectance</term><term>Profil raie</term><term>Cristallinité</term><term>Déplacement raie</term><term>Photoluminescence</term><term>Paire accepteur donneur</term><term>Couche épitaxique</term><term>Séléniure de cuivre</term><term>Séléniure d'indium</term><term>Chalcopyrite</term><term>Substrat GaAs</term><term>CuInSe2</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The compositional and temperature dependence of the energy band gap of Cu<sub>x</sub>In<sub>y</sub>Se<sub>2</sub> epitaxial layers grown by metal-organic chemical vapour deposition on GaAs( 1 0 0) substrates was studied by photoreflectance (PR) spectroscopy. Investigation of the compositional dependence at 20 K showed a slight increase in the energy gap with the increase in the [Cu]/[In] fraction. Line-shape analysis of PR spectra indicated that near stoichiometric and slightly Cu-rich CuInSe<sub>2</sub> layers have a better crystallinity than In-rich ones. Investigation of the temperature dependence for both Cu-rich and In-rich modifications, in the range 300-20 K, demonstrated a red-shift of band-gap energies with the decrease in temperature below 70 K and provided experimental evidence of the anomalous temperature dependence of the energy gap in this material. Moreover, a combination of modulation power-dependent PR and photoluminescence studies at 20 K revealed that the optical emission interfering in the PR spectra at energies below the band-gap energy originates from donor-acceptor pair recombination and diminishes at low modulation powers.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-3727</s0></fA01><fA02 i1="01"><s0>JPAPBE</s0></fA02><fA03 i2="1"><s0>J. phys., D. Appl. phys. : (Print)</s0></fA03><fA05><s2>41</s2></fA05><fA06><s2>16</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Compositional and temperature dependence of the energy band gap of Cu<sub>x</sub>In<sub>y</sub>Se<sub>2</sub> epitaxial layers</s1></fA08><fA11 i1="01" i2="1"><s1>XU (H. Y.)</s1></fA11><fA11 i1="02" i2="1"><s1>PAPADIMITRIOU (D.)</s1></fA11><fA11 i1="03" i2="1"><s1>ZOUMPOULAKIS (L.)</s1></fA11><fA11 i1="04" i2="1"><s1>SIMITZIS (J.)</s1></fA11><fA11 i1="05" i2="1"><s1>LUX-STEINER (M.-Ch.)</s1></fA11><fA14 i1="01"><s1>Key Laboratory of Instrumentation Science and Dynamic Measurement (North University of China), Ministry of Education</s1><s2>030051 Taiyuan</s2><s3>CHN</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, School of Applied Mathematics and Physics, National Technical University of Athens, 9 Heroon Polytechniou Str., Zografou Campus</s1><s2>157 80 Athens</s2><s3>GRC</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Department III, Laboratory of 'Materials Science and Technology'/Inter-disciplinary Postgraduate Program of NTUA, School of Chemical Engineering, National Technical University of Athens, 9 Heroon Polytechniou Str., Zografou Campus</s1><s2>157 73 Athens</s2><s3>GRC</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>Department SE2: Heterogeneous Material Systems, Hahn-Meitner Institut, Glienickerstr. 100</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>5 aut.</sZ></fA14><fA20><s2>165102.1-165102.7</s2></fA20><fA21><s1>2008</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>5841</s2><s5>354000196497640300</s5></fA43><fA44><s0>0000</s0><s1>© 2008 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>33 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>08-0443955</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of physics. D, Applied physics : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The compositional and temperature dependence of the energy band gap of Cu<sub>x</sub>In<sub>y</sub>Se<sub>2</sub> epitaxial layers grown by metal-organic chemical vapour deposition on GaAs( 1 0 0) substrates was studied by photoreflectance (PR) spectroscopy. Investigation of the compositional dependence at 20 K showed a slight increase in the energy gap with the increase in the [Cu]/[In] fraction. Line-shape analysis of PR spectra indicated that near stoichiometric and slightly Cu-rich CuInSe<sub>2</sub> layers have a better crystallinity than In-rich ones. Investigation of the temperature dependence for both Cu-rich and In-rich modifications, in the range 300-20 K, demonstrated a red-shift of band-gap energies with the decrease in temperature below 70 K and provided experimental evidence of the anomalous temperature dependence of the energy gap in this material. Moreover, a combination of modulation power-dependent PR and photoluminescence studies at 20 K revealed that the optical emission interfering in the PR spectra at energies below the band-gap energy originates from donor-acceptor pair recombination and diminishes at low modulation powers.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Effet température</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Temperature effects</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Bande interdite</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Energy gap</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Méthode MOCVD</s0><s5>05</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>MOCVD</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Photoréflectance</s0><s5>06</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Photoreflectance</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Profil raie</s0><s5>08</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Line shape</s0><s5>08</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Cristallinité</s0><s5>09</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Crystallinity</s0><s5>09</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Cristalinidad</s0><s5>09</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Déplacement raie</s0><s5>10</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Spectral line shift</s0><s5>10</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>12</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>12</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Paire accepteur donneur</s0><s5>13</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Acceptor donor pair</s0><s5>13</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Par aceptor dador</s0><s5>13</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Couche épitaxique</s0><s5>15</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Epitaxial layers</s0><s5>15</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Séléniure de cuivre</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Séléniure d'indium</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Chalcopyrite</s0><s5>20</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Chalcopyrite</s0><s5>20</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Substrat GaAs</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>CuInSe2</s0><s4>INC</s4><s5>53</s5></fC03><fN21><s1>287</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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